Fluorinated h-BN as a magnetic semiconductor
نویسندگان
چکیده
منابع مشابه
Fluorinated h-BN as a magnetic semiconductor
We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The obser...
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ژورنال
عنوان ژورنال: Science Advances
سال: 2017
ISSN: 2375-2548
DOI: 10.1126/sciadv.1700842